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Bestseller
Author
Luo, Peng.
Title
GaN HEMT Modeling Including Trapping Effects Based on Chalmers Model and Pulsed S-Parameter Measurements.
Publication Info.
Göttingen : Cuvillier Verlag, 2019.
Online access
Online ebook via EBSCO. Access restricted to current Rider University students, faculty, and staff.
Instructions for reading/downloading the EBSCO version of this ebook
Item Status
Description
1 online resource (161 pages).
text file
Series
Innovationen mit Mikrowellen und Licht. Forschungsberichte aus dem Ferdinand-Braun-Institut, Leibniz-Institut für Höchstfrequenztechnik ; v. 46
Innovationen mit Mikrowellen und Licht. Forschungsberichte aus dem Ferdinand-Braun-Institut, Leibniz-Institut für Höchstfrequenztechnik.
Local Note
eBooks on EBSCOhost EBSCO eBook Subscription Academic Collection - North America
Subject
Field-effect transistors -- Congresses.
Field-effect transistors.
Genre/Form
Conference papers and proceedings.
Conference papers and proceedings.
Other Form:
Print version: Luo, Peng. GaN HEMT Modeling Including Trapping Effects Based on Chalmers Model and Pulsed S-Parameter Measurements. Göttingen : Cuvillier Verlag, ©2019 9783736999060
ISBN
3736989067
9783736989061 (electronic book)