Title Indium phosphide HBT in thermally optimized periphery for applications up to 300 GHz.

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Description	1 online resource (155 pages).
	text file
Series	Innovationen mit Mikrowellen und Licht. Forschungsberichte aus dem Ferdinand-Braun-Institut, Leibniz-Institut für Höchstfrequenztechnik ; v. 36
	Innovationen mit Mikrowellen und Licht. Forschungsberichte aus dem Ferdinand-Braun-Institut, Leibniz-Institut für Höchstfrequenztechnik.
Contents	Acknowledgment; Zusammenfassung; Abstract; Contents; 1 Introduction; 2 Diamond substrate properties; 3 Thermal resistance of HBTs; 4 Electrical and thermal via connection through the diamond layer; 5 Full process integration and realization of diamond heat -- sink InP HBT MMICs; 6 Summary; 7 Outlook; Publications; Appendix; Bibliography.
Bibliography	Includes bibliographical references.
Local Note	eBooks on EBSCOhost EBSCO eBook Subscription Academic Collection - North America
Subject	Modulation-doped field-effect transistors.
	Modulation-doped field-effect transistors.
Other Form:	Print version: Nosaeva, Ksenia. Indium phosphide HBT in thermally optimized periphery for applications up to 300 GHz. Göttingen : Cuvillier Verlag, ©2016 9783736992870
ISBN	3736982879
	9783736982871 (electronic book)
	9783736992870