| Description |
1 online resource (325 pages). |
| Physical Medium |
polychrome |
| Description |
text file |
| Series |
Solid State Phenomena Ser. ; v. Volume 314
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Solid State Phenomena Ser.
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| Summary |
Selected peer-reviewed full text papers from the 15th International Symposium on Ultra Clean Processing of Semiconductor Surfaces (UCPSS) Selected, peer-reviewed papers from the 15-th International Symposium on Ultra Clean Processing of Semiconductor Surfaces (UCPSS), April 12-15, 2021, Mechelen, Belgium. |
| Contents |
Intro -- Ultra Clean Processing of Semiconductor Surfaces XV -- Preface -- Table of Contents -- Chapter 1: Contamination and Contamination Control -- Surface Cleaning Challenges for Organic Light Emitting Diodes -- Characterization and Removal of Metallic Contamination in H2O and H2O2 Using Single Particle Inductively Coupled Plasma Mass Spectrometry -- Direct Analysis of Ultra Trace Metallic Particles in NH3 and HCl Gases by Gas Exchange Device (GED)-ICP-MS -- Investigation of Contaminants in Single Wafer Wet Cleaning Using Isopropyl Alcohol |
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Cl-Containing Microplastics from the Environment -- Experimental Wafer Carrier Contamination Analysis and Monitoring in Fully Automated 300 mm Power Production Lines -- Wafer Container Monitoring Concerning Airborne Molecular Contaminations along a 300 mm Power Semiconductor Production Flow -- Chapter 2: FEOL: Surface Chemistry and Etching of Group IV Semiconductors -- Towards Si-Cap-Free SiGe Passivation: Impact of Surface Preparation on Low-Pressure Oxidation of SiGe -- Wet Chemical Cleaning of Organosilane Monolayers -- Reaction Kinetics of Poly-Si Etching in TMAH Solution |
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Surface Chemistry and Nanoscale Wet Etching of Group IV Semiconductors in Acidic H2O2 Solutions -- Si1-XGeX Selective Etchant for Gate-All-Around Transistors -- Chapter 3: FEOL: Surface Chemistry and Etching of III-V Compound Semiconductors -- GaN MOS Structures with Low Interface Trap Density -- Analysis of Surface Reaction for Group III-V Compound Semiconductors in Functional Water -- Effect of Surface Oxidation on the Material Loss of InGaAs in Acidic Solutions -- Characterization of Wet Chemical Atomic Layer Etching of InGaAs |
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Chapter 4: FEOL: Etch Dielectric Films and Removal of Masking Films -- Highly Selective Etching between Different Oxide Films by Vapor Phase Cleaning -- Silicon Corrosion during Selective Silicon Nitride Etch with Hot Diluted Hydrofluoric Acid -- Kinetic Study on the Si3N4 Etching in Superheated Water -- Challenges and Solutions of Replacement Metal Gate Patterning to Enable Gate-all-Around Device Scaling -- Removal of SOC Hard Mask for Patterning of Work Function Metal by Thermally Activated Ozone Gas |
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High Performance, Eco-Friendly SPM Cleaning Technology Using Integrated Bench-Single Wafer Cleaning System -- Chapter 5: Wet Processing in Narrow Spaces and Pattern Collapse -- Polydimethylsiloxane Micro-Channels Application for the Study of Dynamic Wetting of Nano-Etched Silicon Surfaces Based on Acoustic Characterization Method -- Characterization of Wetting of Deep Silica Nanoholes by Aqueous Solutions Using ATR-FTIR -- Effect of Hydrophobicity and Surface Potential of Silicon on SiO2 Etching in Nanometer-Sized Narrow Spaces |
| Local Note |
eBooks on EBSCOhost EBSCO eBook Subscription Academic Collection - North America |
| Subject |
Semiconductors -- Surfaces -- Congresses.
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Semiconductors -- Surfaces. |
| Genre/Form |
Conference papers and proceedings.
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Conference papers and proceedings.
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| Added Author |
Wostyn, Kurt.
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Meuris, Marc.
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Heyns, Marc.
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| Other Form: |
Print version: Mertens, Paul W. Ultra Clean Processing of Semiconductor Surfaces XV. Zurich : Trans Tech Publications, Limited, ©2021 |
| ISBN |
3035738017 |
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9783035738018 (electronic book) |
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