| Description |
1 online resource (581 pages). |
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text file |
| Series |
Materials, Circuits and Devices Ser.
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Materials, Circuits and Devices Ser.
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| Contents |
Intro; Contents; Preface; List of contributors; 1. Power amplifier design principles (Andrei Grebennikov); 1.1 Basic classes of operation: A, AB, B, and C; 1.2 Load line and output impedance; 1.3 Classes of operation based upon finite number of harmonics; 1.4 Mixed-mode Class C and nonlinear effect of collector capacitance; 1.5 Power gain and stability; 1.6 Impedance matching; 1.6.1 Basic principles; 1.6.2 Matching with lumped elements; 1.6.3 Matching with transmission lines; 1.7 Push-pull and balanced power amplifiers; 1.7.1 Basic push-pull configuration; 1.7.2 Baluns |
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1.7.3 Balanced power amplifiers1.8 Transmission-line transformers and combiners; References; 2. Nonlinear active device modeling (Iltcho Angelov and Mattias Thorsell); 2.1 Introduction: active devices; 2.1.1 Semiconductor devices for PAs; 2.1.2 GaAs FET and InP HEMT devices; 2.1.3 GaN HEMT devices; 2.1.4 CMOS devices; 2.1.5 HBT devices; 2.2 Sources of nonlinearity (Ids, various Gm, Rd, Rtherm, capacitances, breakdown); 2.3 Memory effects; 2.4 Nonlinear characterization; 2.4.1 Active load-pull; 2.4.2 Fast active load-pull; 2.4.3 Nonlinear characterization using active load-pull |
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2.5 Small/Large signal compact models2.5.1 Small-signal equivalent circuit models; 2.5.2 Large-signal compact models; 2.5.3 FET ECLSM model; 2.6 The large-signal model extraction; 2.6.1 Extraction of on-resistance (Ron); 2.6.2 Igs parameter extraction and fit; 2.6.3 Drain Ids current extraction and fit; 2.6.4 Ids parameter extraction model fit low Vds; 2.6.5 Self-heating modeling thermal resistance Rtherm fit; 2.7 Large signal FET equivalent circuit; 2.8 Capacitances and capacitance models' implementation in simulators; 2.9 GaN implementation specifics; 2.10 Implementation of complex Gm shape |
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2.11 Breakdown phenomena2.12 Large-signal model evaluation: power-spectrum measurements and fit; 2.13 LSVNA measurement and evaluation; 2.14 Packaging effects; 2.15 Self-heating modeling implementation GaN; Appendix; Acknowledgments; References; 3. Load pull characterization (Christos Tsironis and Tudor Williams); 3.1 Definition of load pull; 3.2 Scalar and vector load pull; 3.3 Why is load pull needed?; 3.4 Load pull methods; 3.5 Reflection on a variable passive load; 3.6 Injection of coherent (active) signal; 3.6.1 The "split signal" method; 3.6.2 The "active load" method |
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3.6.3 "Open loop" active injection3.6.4 "Hybrid" combination; 3.7 Impedance tuners; 3.7.1 Passive tuners; 3.7.2 Electronic (passive) tuners; 3.7.3 Wideband tuners; 3.7.4 High power tuners; 3.8 Harmonic load pull; 3.8.1 Passive harmonic load pull using di-tri-plexers; 3.8.2 Harmonic rejection tuners; 3.8.3 Wideband multiharmonic tuners; 3.8.4 Low frequency tuners; 3.8.5 Special tuners; 3.9 Fundamental versus harmonic load pull; 3.10 On wafer integration; 3.11 Base-band load pull; 3.12 Advanced considerations on active tuning; 3.12.1 Introduction; 3.12.2 Closed loop (active load) |
| Note |
3.12.3 Open loop-split signal |
| Summary |
This book aims to provide comprehensive, state-of-the-art coverage of RF and microwave power amplifier design with in-depth descriptions of current and potential future approaches. |
| Local Note |
eBooks on EBSCOhost EBSCO eBook Subscription Academic Collection - North America |
| Subject |
Power amplifiers.
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Power amplifiers. |
| Genre/Form |
Electronic books.
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| Other Form: |
Print version: Grebennikov, Andrei. Radio Frequency and Microwave Power Amplifiers : Principles, Device Modeling, and Matching Networks. Stevenage : Institution of Engineering & Technology, ©2019 9781839530364 |
| ISBN |
1839530375 |
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9781839530371 (electronic book) |
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