| Description |
1 online resource. |
| Physical Medium |
polychrome |
| Description |
text file |
| Series |
River Publishers series in circuits and systems
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River Publishers series in circuits and systems.
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| Contents |
Front Cover; Half Title Page; RIVER PUBLISHERS SERIES IN CIRCUITS AND SYSTEMS; Title Page; Copyright Page; Dedication Page; Contents; Preface; Acknowledgments; List of Figures; List of Tables; Chapter 1 -- Introduction; 1.1 The Technology Scaling Roadmap so far; 1.2 New Solutions for Future Technology Nodes; 1.3 Energy Harvesting in a More than Moore era; 1.4 Tunnel FETs as a Key Technology for Energy Harvesting; 1.5 Topics Addressed in This Book; 1.6 Book Structure; References; Chapter 2 -- Tunnel FET: State of the Art; 2.1 The Tunneling Phenomenon; 2.2 Band-to-Band Tunneling (BTBT) Current. |
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2.3 From Tunnel Diode to Gated p-i-n Structure2.3.1 First Observations of Tunneling in Gated Structures; 2.3.2 Structural Improvements for Boosted Performance; 2.3.3 Tunnel FET Evolution over the Past Decades; 2.3.4 Directions for Further Improvements in Tunneling Devices; 2.3.5 A Brief Discussion of the Tunneling Device State of the Art; References; Chapter 3 -- Tunnel FET: Physical Properties; 3.1 Thermionic Injection vs. BTBT; 3.2 Impact of Physical Properties in the TFET Performance; 3.2.1 Device Structure and Applied Model; 3.2.2 Dielectric Permittivity, EOT, and Body Thickness Impact. |
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3.2.3 Impact of Doping in Drain and Source Regions of Si-TFET3.2.4 Impact of Materials in a Double-gate TFET; 3.2.5 Impact of Doping in Drain and Source Regions for TFETs with Different Materials; 3.3 Chapter Summary; References; Chapter 4 -- Tunnel FET: Electrical Properties; 4.1 Tunnel FET Models for SPICE Simulations; 4.1.1 Analytic TFET Model; 4.1.2 TFET Model Based on Lookup Tables; 4.2 Electrical Characteristics of TFETs; 4.2.1 Input Characteristics of TFETs; 4.2.2 Output Characteristics of TFETs; 4.2.3 Intrinsic Capacitance of TFETs; 4.3 TFETs in Digital Design. |
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4.4 TFETs in Analog Design4.5 TFETs' Circuit Layout Issues and Extra-parasitics; 4.6 Chapter Summary; References; Chapter 5 -- Tunnel FET-based Charge Pumps; 5.1 Motivation; 5.2 Problems Associated with TFETs in Charge Pumps; 5.3 Circuit-level Solutions for Reverse-biased TFETs; 5.4 Proposed TFET-based Charge Pump; 5.5 Capacitance Optimization of Charge-pump Stage; 5.6 Charge Pumps' Performance Comparison; 5.7 Chapter Summary; References; Chapter 6 -- Tunnel FET-based Rectifiers; 6.1 Motivation; 6.2 State-of-the-art TFET-based Rectifier; 6.3 Advantages of Tunnel FETs in Rectifiers. |
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6.4 Drawbacks of Tunnel FETs in Rectifiers6.5 Proposed Tunnel FET-based Rectifier; 6.6 Optimization of the Proposed Rectifier; 6.7 Performance Comparison of Rectifiers; 6.8 Chapter Summary; References; Chapter 7 -- TFET-based Power-management Circuit for RF Energy Harvesting; 7.1 Motivation; 7.2 Challenges in RF Power Transport; 7.3 Proposed TFET-based PMC; 7.3.1 Startup Circuit; 7.3.2 Boost Circuit; 7.3.2.1 Challenges in TFET-based boost-converter design; 7.3.2.2 Advantages of TFETs in PMC and boost converters; 7.3.3 Controller Circuit; 7.4 Simulation Results; 7.5 Chapter Summary; References. |
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Chapter 8 -- TFET-based Power-management Circuit for Nanowatt DC Energy-Harvesting Sources. |
| Local Note |
eBooks on EBSCOhost EBSCO eBook Subscription Academic Collection - North America |
| Subject |
Digital electronics -- Design and construction.
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Digital electronics -- Design and construction. |
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Digital electronics. |
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Low voltage integrated circuits.
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Low voltage integrated circuits. |
| Genre/Form |
Electronic books.
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| Added Author |
Moll, Francesc.
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Valtchev, Stanimir.
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| Other Form: |
Print version: Cavalheiro, David. Ultra-low input power conversion circuits based on tunnel EETs. Gistrup, Denmark : River Publishers, [2018] 9788793609754 |
| ISBN |
9788793609754 (electronic book) |
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8793609752 (electronic book) |
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8793609760 |
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9788793609761 |
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9788793609761 |
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8793609760 |
| Standard No. |
9788793609761 |
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