| Description |
1 online resource (1078 pages) : illustrations (some color). |
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text file |
| Series |
Materials science forum,
0255-5476 ;
volumes 821-823
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Materials science forum ; v. 821-823.
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| Note |
This conference provided an international scientific forum to 570 researchers and engineers from 29 countries ... -- Preface. |
| Summary |
Collection of selected, peer reviewed papers from the European Conference on Silicon Carbide & Related Materials (ECSCRM 2014), September 21-25, 2014, Grenoble, France. The 243 papers are grouped as follows: I. SiC Growth; I.1 Bulk Growth; I.2 Epitaxial and Thin Film Growth; II. SiC Theory and Characterization; II.1 Fundamental and Material Properties; II.2 Point and Extended Defects; II.3 Surfaces and Interfaces; III. SiC Processing; III.1 Doping, Implantation and Contact; III.2 Dielectric Growth and Characterization; III.3 Etching and Machining; IV. SiC Devices; IV.1 Diodes; IV.2 Field Effect Transistors; IV.3 Other Devices; V. Related Materials; V.1 Other Carbon Based Materials; V.2 Nitrides and Other Materials Keyword: Silicon carbide, Wide bandgap semiconductor, Bulk growth, Epitaxial growth, Processing, Power electronics, MOS, characterization, graphene This volume collects 243 papers from the 10th European Conference on Silicon Carbide & Related Materials (ECSCRM 2014), held in Grenoble, France, in September 2014, where researchers discussed issues in the field of wide bandgap semiconductors, focusing on silicon carbide, but also III-nitrides, diamond, and related materials like graphene. The papers address silicon carbide growth, including bulk, epitaxial, and thin film growth; theory and characterization, including fundamentals and material properties, point and extended defects, and surfaces and interfaces; processing, focusing on doping, implantation, and contact, dielectric growth and characterization, and etching and machining; devices and circuits, such as diodes and field effect transistors; and related materials, including other carbide-based materials and nitrides. Contributors are materials scientists and other researchers from around the world. -- Carbon-- Engineering-- Materials science. |
| Local Note |
eBooks on EBSCOhost EBSCO eBook Subscription Academic Collection - North America |
| Subject |
Silicon carbide -- Congresses.
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Silicon carbide. |
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Silicon carbide -- Electric properties -- Congresses.
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Silicon carbide -- Electric properties. |
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Silicon-carbide thin films -- Congresses.
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Silicon-carbide thin films. |
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Nitrides -- Congresses.
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Nitrides. |
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Graphene -- Congresses.
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Graphene. |
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Crystal growth -- Congresses.
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Crystal growth. |
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Wide gap semiconductors -- Materials -- Congresses.
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Wide gap semiconductors. |
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Materials. |
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Wide gap semiconductors -- Materials -- Technological innovations -- Congresses.
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Technological innovations. |
| Genre/Form |
Conference papers and proceedings.
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Electronic books.
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Conference papers and proceedings.
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| Added Author |
Chaussende, Didier, editor.
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Ferro, Gabriel, editor.
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| ISBN |
9783038269434 (electronic book) |
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3038269433 (electronic book) |
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9783038354789 print |
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