| Description |
1 online resource (viii, 253 pages) : illustrations. |
| Physical Medium |
polychrome |
| Description |
text file |
| Series |
Selected topics in electronics and systems ; v. 37
|
|
Selected topics in electronics and systems ; v. 37.
|
| Note |
Reprinted from: International journal of high speed electronics and systems, v. 15, no. 1, 2005. |
| Bibliography |
Includes bibliographical references and index. |
| Contents |
Preface; Contents; 1 Ion-S timulated Processes; 2 Transmutation Doping of Semiconductors by Charged Particles; 3 Doping of Semiconductors Using Radiation Defects; 4 Formation of Buried Porous and Damaged Layers; References; Index. |
| Summary |
The increasing complexity of problems in semiconductor electronics and optoelectronics has exposed the insufficient potential of the technological doping processes currently used. One of the most promising techniques, which this book explores, is radiation doping: the intentional, directional modification of the properties of semiconductors under the action of various types of radiation. The authors consider the basic principles of proton interactions with single crystal semiconductors on the basis of both theory as well as practical results. All types of proton modifications of the materials. |
| Local Note |
eBooks on EBSCOhost EBSCO eBook Subscription Academic Collection - North America |
| Subject |
Semiconductor doping.
|
|
Semiconductor doping. |
|
Semiconductors -- Effect of radiation on.
|
|
Semiconductors -- Effect of radiation on. |
| Genre/Form |
Electronic books.
|
| Added Author |
Abrosimova, Vera.
|
| Added Title |
International journal of high speed electronics and systems.
|
| Other Form: |
Print version: Kozlovskiĭ, V.V. (Vitaliĭ Vasilʹevich). Radiation defect engineering. New Jersey ; London : World Scientific, ©2005 9812565213 (DLC) 2006283955 (OCoLC)64096752 |
| ISBN |
9812703195 (electronic book) |
|
9789812703194 (electronic book) |
|
9812565213 |
|
