Title Silicon carbide and related materials 2012 : selected, peer reviewed materials from the 9th European Conference on Silicon carbide and Related Materials, September 2-6, 2012, St. Petersburg, Russian Federation / edited by Alexander A. Lebedev, Sergey Yu. Davydov, Pavel A. Ivanov adn Mikhail E. Levinshtein.

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Description	1 online resource (xxiii, 1149 pages .)
	text file
Series	Materials science forum ; v. 740-742
	Materials science forum ; v. 740-742.
Bibliography	Includes bibliographical references and indexes.
Summary	The volume on Silicon Carbide and Related Materials is divided into 10 chapters ranging from ""Bulk growth"" to ""Device and application"". The reports demonstrate the technical and scientific advances in the related areas: 150 mm 4H-SiC wafers are now commercially available, a significant improvement of the carrier lifetime (up to 35 ms) for n-type SiC epi-layers has been achieved, SiC diodes have a large market share in server and telecom power applications requiring the maximum efficiency, and a variety of 1- cm 2, 15 kV class bipolar devices have been demonstrated, including PN Diodes, IG.
Local Note	eBooks on EBSCOhost EBSCO eBook Subscription Academic Collection - North America
Subject	Silicon carbide -- Congresses.
	Silicon carbide.
	Silicon carbide -- Electric properties -- Congresses.
	Silicon carbide -- Electric properties.
	Silicon-carbide thin films -- Congresses.
	Silicon-carbide thin films.
Genre/Form	Electronic books.
	Conference papers and proceedings.
	Conference papers and proceedings.
Added Author	Lebedev, Alexander A., 1959- editor.
	Davydov, Sergey Uu, editor.
	Ivanov, Pavel A., editor.
	Levinshtein, Mikhail E., editor.
Other Form:	Print version: 9783037856246 3037856246
ISBN	3038260053 (electronic book)
	9783038260059 (electronic book)
	9783037856246
	3037856246