| Description |
1 online resource (xvii, 508 pages) : illustrations (some color) |
| Physical Medium |
polychrome |
| Description |
text file |
| Bibliography |
Includes bibliographical references. |
| Contents |
Ch. 2. Semiconductor band structures. 2.1. Spin-orbit interaction effects in Zincblende semiconductors : ab initio pseudopotential calculations / M.F. Li, M.P. Surh and S.G. Louie. 2.2. Deformation potentials at the top of valence bands in semiconductors : Ab Initio pseudopotential calculations / Z.G. Gu [and others]. 2.3. Shear-deformation- potential constant of the conduction-band minima of Si : Experimental determination by the deep-level capacitance transient method / M.F. Li [and others]. 2.4. First-principles calculations for quasiparticle energies of GaP and GaAs / J.Q. Wang [and others]. 2.5. Electronic properties of zinc-blende GaN, AlN and their alloys Ga[symbol]Al[symbol]N / W.J. Fan [and others]. 2.6. Valence hole subbands and optical gain spectra of GaN/Ga[symbol]Al[symbol]N strained quantum wells / W.J. Fan [and others]. 2.7. Electronic band structures and effective-mass parameters of wurtzite GaN and InN / Y.C. Yeo, T.C. Chong and M.F. Li. 2.8. Analysis of optical gain and threshold current density of wurtzite InGaN/GaN/AlGaN quantum well lasers / Y.C. Yeo [and others] -- ch. 3. Analog integrated circuit design. 3.1. Linearity improvement of CMOS transconductors for low supply applications / M.F. Li, X. Chen and Y.C. Lim. 3.2. Low voltage linear OTA with rail-to-rail differential mode input signal capability / X.W. Zhang, M.F. Li and U. Dasgupta. 3.3. A new CMOS buffer ampliflier design used in low voltage MEMS interface circuits / Y.J. Ha, M.F. Li and A.Q. Liu. 3.4. A low-voltage CMOS OTA with rail-to-rail differential input range / M.F. Li [and others]. 3.5. A 1.2 V rail-to-rail differential mode input linear CMOS transconductor / A.M. Xu and M.F. Li. 3.6. A new low voltage CMOS transconductor for VHF filtering applications / Luo Zhenying [and others] -- ch. 4. CMOS device reliability. 4.1. Investigation of interface traps in LDD pMOST's by the DCIV method / B.B. Jie [and others]. 4.2. Nondestructive DCIV method to evaluate plasma charging damage in ultrathin gate oxides / H. Guan [and others]. |
| Summary |
This unique volume assembles the author's scientific and engineering achievements of the past three decades in the areas of semiconductor physics and materials, including topics in deep level defects and band structures, CMOS devices, including the topics in device technology, CMOS device reliability, and nano CMOS device quantum modeling, and the Analog Integrated circuit design. It reflects the scientific career of a semiconductor researcher educated in China during the 20th century. The book can be referenced by research scientists, engineers, and graduate students working in the areas of solid state and semiconductor physics and materials, electrical engineering and semiconductor devices as well as chemical engineering. |
| Local Note |
eBooks on EBSCOhost EBSCO eBook Subscription Academic Collection - North America |
| Subject |
Semiconductors -- Research.
|
|
Semiconductors -- Research. |
|
Semiconductors. |
|
Nanoelectronics -- Research.
|
|
Nanoelectronics. |
|
Research. |
| Genre/Form |
Electronic books.
|
|
Electronic books.
|
| Other Form: |
Print version: Li, Ming-Fu. Selected semiconductor research. London : Imperial College Press, ©2011 1848164068 (OCoLC)707326085 |
| ISBN |
9781848164079 (electronic book) |
|
1848164076 (electronic book) |
|
1848164068 |
|
9781848164062 |
|
