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Conference Asia-Pacific Conference on Silicon Carbide and Related Materials (1st : 2018 : Beijing, China)

Title Semiconductors : silicon carbide and related materials : Asia-Pacific Conference on Silicon Carbide and Related Materials (APCSCRM 2018) : selected, peer reviewed papers from the Asia-Pacific Conference on Silicon Carbide and Related Materials (APCSCRM 2018), July 9-12, 2018, Beijing, China / edited by Min Liu.

Publication Info. Zurich, Switzerland : Trans Tech Publications Ltd, [2019]
Online access
Online ebook via EBSCO. Access restricted to current Rider University students, faculty, and staff.
Instructions for reading/downloading the EBSCO version of this ebook

Item Status

Description 1 online resource.
Physical Medium polychrome
Description text file
Series Materials science forum ; volume 954
Materials science forum ; v. 954.
Contents Chapter 1: Growth, structure and property of wide bandgap semiconductors -- Effect of growth chamber structure on the growth of aluminum nitride crystals -- Investigation of the 6-folded pattern in the facetted region of 4° off axis 4H-SiC -- Effects of annealing parameters on epitaxial graphene on SiC substrates -- Influence of the etching process on the surface morphology of 4H-SiC substrate used in the epitaxial graphene -- Theoretical calculation and simulation for microcantilevers based on SiC epitaxial layers -- Homepitaxial growth on Si-Face (0001) on-axis 4H-SiC substrates -- Progress in single crystal growth of wide bandgap semiconductor SiC -- Study on carbon particle inclusions during 4H-SiC growth by using physical vapor transport system -- Electron mobility due to surface roughness scattering in depleted GaAs free-standing thin ribbon -- Measurement of resistivity of silicon carbide by discharge time of equivalent capacitance of the sample -- Study of the growth temperature measurement and control for silicon carbide crystal -- Phase control of Ga203 thin films grown by metal-organic chemical vapor deposition -- Microstructure of interfacial basal plane dislocations in 4H-SiC epilayers
Chapter 2: Fabrication, property and application of wide bandgap semiconductor devices -- Design, fabrication and characterization of a 4.5kV/50A 4H-SiCpiN rectifiers -- Recent progress of SiC MOSFET devices -- Improved electrical properties of 4H-SiC MOS devices with high temperature thermal oxidation -- The correlation between the reduction of interface state density at the SiO2/SiC interface and the NO post-oxide-annealing conditions -- Reliability of 4H-SiC (001) MOS gate oxide by NO post-oxide-annealing -- Low defect thick homoepitaxial layers grown on 4H-SiC wafers for 6500 V JBS devices -- Effect of grinding-induced stress on interface state density of SiC/SiO2 -- GaN Schottky barrier diodes with TiN electrode for microwave power transmission -- Research on threshold voltage instability in SiC MOSFET devices with precision measurement -- Simulation of electrothermal characteristics of 1200V/75A 4H-SiC JBS -- The influence of temperature storage on threshold voltage stability for SiC VDMOSFET -- An improved 4H-SiC trench gate MOSFETs structure with low on-resistance and reduced gate charge -- An optiized p+ shielding 4H-SiC trench gate MOSFETs structure with floating regions -- Simplified silicon carbide MOSFET model based on neural network -- The effect of circuit parameters on reverse biased safe operating area of SiC MOSFET -- Effect of tunneling on small signal characteristics of IMPATT diodes with SiC heteropolytype structures -- Simulation on large signal and noise properties of (n)Si/(p)SiC heterostructural IMPATT diodes -- Research on performance contrast between SiC MOSFET and Si IGBT based on the converter of urban rail vehicles -- Comparison of high voltage SiC MOSFET and Si IGBT power module thermal performance -- Thermo-mechanical reliability of 1200 V-450A IGBT module considering voids in the solder layer -- Keyword index -- Author index.
Local Note eBooks on EBSCOhost EBSCO eBook Subscription Academic Collection - North America
Subject Semiconductors -- Congresses.
Semiconductors.
Genre/Form Electronic books.
Electronic books.
Conference papers and proceedings.
Conference papers and proceedings.
Added Author Lu, Min (Engineer), editor.
ISBN 9783035733853 electronic book
3035733856 electronic book
9783035713855

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