| Description |
1 online resource (xxii, 352 pages) : illustrations. |
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text file |
| Series |
International series on advances in solid state electronics and technology
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International series on advances in solid state electronics and technology.
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| Note |
Title from title screen. |
| Bibliography |
Includes bibliographical references and index. |
| Contents |
""Contents""; ""Foreword""; ""Preface""; ""Definition of Symbols Used for Variables and Constants""; ""1. Semiconductor Device Physics""; ""1.1 Band Structure Concept""; ""1.1.1 Energy Bands and Quasi Particles""; ""1.1.2 Effective Mass Approximation""; ""1.2 Carrier Density and Fermi Level in Semiconductors""; ""1.2.1 Impurities in Semiconductors""; ""1.2.2 Impurity Levels""; ""1.2.3 Number of Carriers under Thermal Equilibrium""; ""1.2.3.1 Carrier Density in Pure Semiconductors""; ""1.2.3.2 Carrier Density in Impure or Doped Semiconductors""; ""1.2.4 Fermi Level""; ""1.3 P-N Junction"" |
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""1.3.1 P-N Junction in Thermal Equilibrium""""1.3.2 P-N Junction with External Voltages""; ""1.4 Device Simulation""; ""1.4.1 Basic Equations""; ""1.4.2 Linearization and Discretization of Poisson Equation""; ""1.4.3 Device Simulation of MOSFETs""; ""1.5 Summary of Equations and Symbols Presented in Chapter 1 for Semiconductor Device Physics""; ""Bibliography""; ""2. Basic Compact Surface-Potential Model of the MOSFET""; ""2.1 Compact Modeling Concept""; ""2.2 Device Structure Parameters of the MOSFET""; ""2.3 Surface Potentials""; ""2.4 Charge Densities""; ""2.5 Drain Current"" |
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""2.6 Summary of Equations and Model Parameters Presented in Chapter 2 for Basic Compact Surface-Potential Model of the MOSFET""""2.6.1 Section 2.2: Device Structure Parameters of the MOSFET""; ""2.6.2 Section 2.3: Surface Potentials""; ""2.6.3 Section 2.4: Charge Densities""; ""2.6.4 Section 2.5: Drain Current""; ""Bibliography""; ""3. Advanced MOSFET Phenomena Modeling""; ""3.1 Threshold Voltage Shift""; ""3.1.1 (I) Short-Channel Effects""; ""3.1.2 (II) Reverse-Short-Channel Effects""; ""3.2 Depletion Effect of the Poly-Si Gate""; ""3.3 Quantum-Mechanical Effects""; ""3.4 Mobility Model"" |
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""3.4.1 Low Field Mobility""""3.4.2 High Field Mobility""; ""3.5 Channel-Length Modulation""; ""3.6 Narrow-Channel Effects""; ""3.6.1 Threshold Voltage Shift""; ""3.6.2 Mobility Modification due to a Narrow Gate""; ""3.6.3 Leakage Current due to STI Technology""; ""3.6.4 Small-Geometry Effects""; ""3.7 Effects of the Length of the Diffused Source/Drain Contacts in Shallow-Trench Isolation (STI) Technologies""; ""3.8 Temperature Dependences""; ""3.9 Conservation of Symmetry at Vds = 0""; ""3.10 Harmonic Distortions"" |
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""3.11 Summary of Equations and Model Parameters Appearing in Chapter 3 for Advanced MOSFET Phenomena Modeling""""3.11.1 Section 3.1: Threshold Voltage Shift""; ""3.11.2 Section 3.2: Depletion Effect of the Poly-Silicon Gate""; ""3.11.3 Section 3.3: Quatum-Mechanical Effects""; ""3.11.4 Section 3.4: Mobility Model""; ""3.11.5 Section 3.5: Channel-Length Modulation""; ""3.11.6 Section 3.6: Narrow-Channel Effects""; ""3.11.7 Section 3.7: Effect of the Source/Drain Diffusion Length for Shallow-Trench Isolation (STI) Technologies""; ""3.11.8 Section 3.8: Temperature Dependences"" |
| Local Note |
eBooks on EBSCOhost EBSCO eBook Subscription Academic Collection - North America |
| Subject |
Metal oxide semiconductor field-effect transistors -- Mathematical models.
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Metal oxide semiconductor field-effect transistors -- Mathematical models. |
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Metal oxide semiconductor field-effect transistors. |
| Genre/Form |
Electronic books.
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Electronic books.
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| Added Author |
Mattausch, Hans Jürgen, author.
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Ezaki, Tatsuya, author.
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| Other Form: |
Print version: Miura-Mattausch, Mitiko Physics And Modeling Of Mosfets, The : Surface-Potential Model Hisim Singapore : World Scientific & Imperial College Press,c2008 9789812568649 |
| ISBN |
9812812059 (electronic book) |
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9789812812056 (electronic book) |
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9789812568649 |
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9812568646 |
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