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Author Talanin, V. I. (Vitaliĭ Igorʹevich), author.

Title The formation of structural imperfections in semiconductor silicon / by V.I. Talanin and I.E. Talanin.

Publication Info. Newcastle upon Tyne, UK : Cambridge Scholars Publishing, 2018.

Item Status

Description 1 online resource (xii, 269 pages) : illustrations
Physical Medium polychrome
Description text file
Summary "Today, it is difficult to imagine all spheres of human activity without personal computers, solid-state electronic devices, micro- and nanoelectronics, photoconverters, and mobile communication devices. The basic material of modern electronics and for all of these industries is semiconductor silicon. Its properties and applications are determined by defects in its crystal structure. However, until now, there has been no complete and reliable description of the creation and transformation of such a defective structure. This book solves this mystery through two different approaches to semiconductor silicon: the classical and the probabilistic. This book brings together, for the first time, all existing experimental and theoretical information on the internal structure of semiconductor silicon. It will appeal to a wide range of readers, from materials scientists and practical engineers to students."-- Back cover
Bibliography Includes bibliographical references (pages 239-267).
Contents Chapter one. Growth of dislocation-free silicon single crystals from melt and defect formation -- Chapter two. Physical modeling of defect formation processes in dislocation-free single crystals of silicon -- Chapter three. Physical basis of a heterogenous (two-stage) model of grown-in microdefect formation -- Chapter four. High-temperature precipitation of impurity in dislocation-free silicon single crystals -- Chapter five. The formation of microvoids and interstitial dislocation loops during crystal cooling after growing -- Chapter six. General approach to the engineering of defects in semiconductor silicon.
Local Note eBooks on EBSCOhost EBSCO eBook Subscription Academic Collection - North America
Subject Silicon -- Structure.
Silicon.
Semiconductors -- Impurity distribution.
Semiconductors -- Impurity distribution.
Semiconductors -- Materials.
Semiconductors -- Materials.
Condensed matter physics (liquid state & solid state physics)
Materials science.
Mathematical modelling.
TECHNOLOGY & ENGINEERING -- Mechanical.
Genre/Form Electronic books.
Added Author Talanin, I. E. (Igor Evgenievich), author.
Other Form: Print version: Talanin, V.I. (Vitaliĭ Igorʹevich). Formation of structural imperfections in semiconductor silicon. Newcastle upon Tyne, UK : Cambridge Scholars Publishing, 2018 1527506355 (OCoLC)1019739852
ISBN 9781527523425 (electronic book)
152752342X (electronic book)
1527506355
9781527506350