Title Thick films : properties, technology, and applications / Michael I. Panzini, editor.

Publication Info.	New York : Nova Science Publishers, [2012]
	©2012

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Description	1 online resource (x, 386 pages) : illustrations.
	text file
Series	Materials science and technologies
	Electrical engineering developments
	Materials science and technologies series.
	Electrical engineering developments series.
Bibliography	Includes bibliographical references and index.
Contents	""THICK FILMS ""; ""THICK FILMS ""; ""CONTENTS ""; ""PREFACE""; ""TRANSPORT AND CHEMICAL PROCESSES FOR SEMICONDUCTOR SILICON EPITAXIAL FILM FORMATION ""; ""ABSTRACT ""; ""1. CHEMICAL PROCESS OF SILICON EPITAXIAL GROWTH IN A TRICHLOROSILANE-HYDROGEN SYSTEM ""; ""1.1. Introduction ""; ""1.2. Silicon Epitaxial Growth""; ""1.3. Quadrupole Mass Spectrometry (QMS) ""; ""1.4. Mass Spectra of Chlorosilane Gases ""; ""1.5. Hydrogen Chloride Gas Concentration ""; ""1.6. Dominant Chlorosilane Species in the Gas Phase ""; ""1.7. Dominant Overall Chemical Reaction ""
	""1.8. Contribution of Surface Reaction in a Trichlorosilane-Hydrogen System """"2. GAS FLOW AND HEAT TRANSFER IN A PANCAKE CHEMICAL VAPOR DEPOSITION REACTOR ""; ""2.1. Introduction ""; ""2.2. Reactor Configuration and Experimental Conditions""; ""2.3. Reactor Geometry and Calculations ""; ""2.4. Gas Motions at Room Temperature ""; ""2.5. Gas Flow and Heat Transfer at Epitaxial Growth Temperature ""; ""3. NUMERICAL EVALUATION OF SILICON FILM GROWTH FROM TRICHLOROSILANE-HYDROGEN GAS MIXTURE IN A HORIZONTAL CHEMICAL VAPOR DEPOSITION REACTOR ""; ""3.1. Introduction ""
	""3.2. Preparation of Silicon Epitaxial Film """"3.3. Chemical Reaction Rate ""; ""3.4. Transport Phenomena in the Reactor""; ""3.5. Effect of Trichlorosilane Concentration on Gas Flow and Temperature ""; ""3.6. Effect of Trichlorosilane Concentration and Thermal Diffusion on Growth Rate ""; ""4. ROLE OF SUBSTRATE ROTATION FOR EPITAXIAL SILICON FILM GROWTH IN A HORIZONTAL SINGLE-WAFER REACTOR ""; ""4.1. Introduction ""; ""4.2. Si Epitaxial Film Growth Process ""; ""4.3. Silicon Film Growth Rate and Thickness on the Rotating Substrate ""
	""4.4. Transport Phenomena Induced by Rotating Substrate """"5. TRANSPORT AND EPITAXY MODEL FOR OF SILICON EPITAXIAL GROWTH IN TRICHLOROSILANE-HYDROGEN SYSTEM""; ""5.1. Introduction""; ""5.2. Preparation of Silicon Epitaxial Films ""; ""5.3. Model on the Rate Process ""; ""5.3.1. Chemical Species in the Gas Phase ""; ""5.3.2. Chemical Species at Substrate Surface ""; ""5.3.3. Chemical Reactions and Rate Process at the Surface ""; ""5.4. Silicon Epitaxial Growth Rate""; ""5.5. Rate constants ""; ""5.6. State Of Surface during Epitaxial Growth ""
	""6. NONLINEAR INCREASE IN SILICON EPITAXIAL GROWTH RATE IN A TRICHLOROSILANE-HYDROGEN SYSTEM AT ATMOSPHERIC PRESSURE """"6.1. Mechanism for Nonlinear Increase in Growth Rate ""; ""7. MULTI-INLET DESIGN AND SILICON EPITAXIAL FILM FLATNESS ""; ""7.1. Introduction ""; ""7.2. Reactor Configuration for Calculations ""; ""7.3. Thickness Profile and Its Formation Mechanism ""; ""8. LOCAL THICKNESS PROFILE OF SILICON EPITAXIAL FILM FORMED IN A HORIZONTAL SINGLE-WAFER EPITAXIAL REACTOR""; ""8.1. Introduction ""; ""8.2. Reactor Configuration For Calculations ""; ""8.3. Epitaxial Film Formation ""
Local Note	eBooks on EBSCOhost EBSCO eBook Subscription Academic Collection - North America
Subject	Thick films.
	Thick films.
	Electronics -- Materials.
	Electronics -- Materials.
Genre/Form	Electronic books.
Added Author	Panzini, Michael I.
Other Form:	Print version: 9781614703846 1614703841 (DLC) 2011022493
ISBN	1614704015 (electronic book)
	9781614704010 (electronic book)
	9781614703846 (hardcover ; alkaline paper)
	1614703841 (hardcover ; alkaline paper)

Title Thick films : properties, technology, and applications / Michael I. Panzini, editor.

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