| Description |
1 online resource (1014 pages) : illustrations. |
| Physical Medium |
polychrome |
| Description |
text file |
| Series |
Materials science forum ; volumes 924
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Materials science forum ; v. 924.
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| Bibliography |
Includes bibliographical references and index. |
| Contents |
Intro; Silicon Carbide and Related Materials 2017; Preface; Table of Contents; Chapter 1: Bulk and Epitaxial Growth; 1.1: Bulk Growth; SEMI Standards for SiC Wafers; Optimization of 150 mm 4H SiC Substrate Crystal Quality; Structural Characterization of the Growth Front of 4H-SiC Boules Grown Using the Physical Vapor Transport Growth Method; Investigation of Run-to-Run Fluctuation in Growth Conditions of Physical Vapor Transport Growth of 4H-SiC Crystals; Resistivity Increase in 6H-SiC Crystal Grown with Simple Modification in PVT Process. |
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The Effect of Stepped Wall of the Graphite Crucible in Top Seeded Solution Growth of SiC CrystalDevelopment of Solvent Inclusion Free 4H-SiC Off-Axis Wafer Grown by the Top-Seeded Solution Growth Technique; Effect of the Growth Conditions on the Crystal Quality in Solution Growth of SiC Using Cr Solvent without Molten Si; Dislocation Behavior in Bulk Crystals Grown by TSSG Method; Experimental Determination of Carbon Solubility in Si0.56Cr0.4M0.04 (M = Transition Metal) Solvents for Solution Growth of SiC; Modification of Crucible Shape in Top Seeded Solution Growth of SiC Crystal. |
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Solution Growth of SiC from the Crucible Bottom with Dipping under Unsaturation State of Carbon in SolventInfluence of Additives on Surface Smoothness and Polytype Stability in Solution Growth of n-Type 4H-SiC; Suppression of Polytype Transformation with Extremely Low-Dislocation-Density 4H-SiC Crystal in Two-Step Solution Method; 1.2: Epitaxial Growth; Status and Trends in Epitaxy and Defects; 99.9% BPD Free 4H-SiC Epitaxial Layer with Precisely Controlled Doping upon 3 x 150 mm Hot-Wall CVD; Growth of 150 mm 4H-SiC Epitaxial Layer by a Hot-Wall Reactor. |
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Glide of Basal Plane Dislocations during 150 mm 4H-SiC Epitaxial Growth by a Hot-Wall ReactorGrowth of 4H-SiC Epitaxial Layer through Optimization of Buffer Layer; High In-Wafer Uniformity of Growth Rate and Carrier Concentration on n-Type 4H-SiC Epitaxial Films Achieved by High Speed Wafer Rotation Vertical CVD Tool; Improved Uniformity of Silicon Carbide Epitaxy Grown in a High-Volume Multi-Cassette Epitaxy Reactor; Quick and Practical Cleaning Process for Silicon Carbide Epitaxial Reactor; Understanding the Chemistry in Silicon Carbide Chemical Vapor Deposition. |
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Triangular Defects Reduction and Uniformity Improvement of 4H-SiC Epitaxial Growth in a Planetary ReactorReduction of Surface and PL Defects on n-Type 4H-SiC Epitaxial Films Grown Using a High Speed Wafer Rotation Vertical CVD Tool; Influence and Mutual Interaction of Process Parameters on the Z1/2 Defect Concentration during Epitaxy of 4H-SiC; CVD Filling of Narrow Deep 4H-SiC Trenches in a Quasi-Selective Epitaxial Growth Mode; Hot Filament CVD Growth of 4H-SiC Epitaxial Layers; Stacking Faults Defects on 3C-SiC Homo-Epitaxial Films; Silicon (001) Heteroepitaxy on 3C-SiC(001)/Si(001) Seed. |
| Note |
Chapter 2: Defects, Material Studies and Characterization. |
| Local Note |
eBooks on EBSCOhost EBSCO eBook Subscription Academic Collection - North America |
| Subject |
Silicon carbide -- Congresses.
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Silicon carbide. |
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Silicon carbide -- Electric properties -- Congresses.
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Silicon carbide -- Electric properties. |
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Silicon-carbide thin films -- Congresses.
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Silicon-carbide thin films. |
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Nitrides -- Congresses.
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Nitrides. |
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Graphene -- Congresses.
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Graphene. |
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Crystal growth -- Congresses.
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Crystal growth. |
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Wide gap semiconductors -- Materials -- Congresses.
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Wide gap semiconductors. |
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Materials. |
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Wide gap semiconductors -- Materials -- Technological innovations -- Congresses.
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Technological innovations. |
| Genre/Form |
Electronic books.
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Conference papers and proceedings.
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Conference papers and proceedings.
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| Added Author |
Stahlbush, Robert, editor.
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| Other Form: |
Print version: Stahlbush, Robert. Silicon Carbide and Related Materials 2017. Zurich : Trans Tech Publications, Limited, ©2018 9783035711455 |
| ISBN |
9781523122844 (electronic book) |
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1523122846 (electronic book) |
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9783035731453 (electronic book) |
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3035731454 (electronic book) |
