LEADER 00000cam a2200685Ma 4500 001 ocn646769029 003 OCoLC 005 20160711055913.3 006 m o d 007 cr cn||||||||| 008 060316s2004 si a ob 000 0 eng d 019 261583698|a505144459|a764502834|a879074235 020 9789812794703|q(electronic book) 020 9812794700|q(electronic book) 020 |z9789812389404 020 |z9812389407 035 (OCoLC)646769029|z(OCoLC)261583698|z(OCoLC)505144459 |z(OCoLC)764502834|z(OCoLC)879074235 040 E7B|beng|epn|cE7B|dOCLCQ|dN$T|dYDXCP|dUBY|dIDEBK|dOCLCQ |dOCLCO|dEBLCP|dDEBSZ|dOCLCQ 049 RIDW 050 4 TK7870.285|b.R33 2004eb 072 7 TEC|x008020|2bisacsh 072 7 TEC|x008010|2bisacsh 082 04 621.3815|222 090 TK7870.285|b.R33 2004eb 245 00 Radiation effects and soft errors in integrated circuits and electronic devices /|ceditors, R.D. Schrimpf, D.M. Fleetwood. 264 1 Singapore ;|aNew Jersey :|bWorld Scientific Pub.,|c[2004] 264 4 |c©2004 300 1 online resource (viii, 339 pages) :|billustrations. 336 text|btxt|2rdacontent 337 computer|bc|2rdamedia 338 online resource|bcr|2rdacarrier 340 |gpolychrome|2rdacc 347 text file|2rdaft 490 1 Selected topics in electronics and systems ;|vvol. 34 504 Includes bibliographical references. 505 0 Preface; CONTENTS; Single Event Effects in Avionics and on the Ground; 1. Introduction; 2. Similarities between SEE in Avionics and on the Ground; 3. Differences Between SEE in Avionics and on the Ground; 4. Atmospheric and Ground Level Environments; 5. SEE Data in devices; 6. Summary; Soft Errors in Commercial Integrated Circuits; 1. Introduction; 2. Scaling trends for memory devices; 3. Seating trend for peripheral logic devices; 4. Conclusion; Single-Event Effects in lll-V Semiconductor Electronics; 1. Introduction; 2. Single-Event Effects in lll-V Electronic Devices. 505 8 3. Summary and ConclusionsInvestigation of Single-Event Transients in Fast Integrated Circuits with a Pulsed Laser; 1. Basic Mechanisms of a SET; 2. SET Laser Testing; 3. Experimental set-up for SET laser testing; 4. Results; 5. Conclusions; System Level Single Event Upset Mitigation Strategies; 1. Introduction; 2. Systems Engineering for Energetic Particle Environment Compatibility; 3. Fault Tolerant Systems Strategies; Radiation-Tolerant Design for High Performance Mixed-Signal Circuits; 1. Introduction; 2. Radiation Mechanisms in Mixed-Signal Integrated Circuits. 505 8 3. Process Component and Layout Choices for Hardened-by- Design Circuits4. Total Dose Hardening; 5. Single-Event Effect Hardening; 6. Dose-Rate Effect Hardening; 7. Conclusion; A Total-Dose Hardening-By-Design Approach for High-Speed Mixed-Signal CMOS Integrated Circuits; 1. Introduction; 2. Closed Geometry Transistors; 3. Circuit Application-Functional Description; 4. Performance of HBD APHY Circuit; 5. Conclusions; Radiation Issues in the New Generation of High Energy Physics Experiments; 1. Introduction; 2. The Radiation Environment; 3. SEU Rate Estimate in the LHC. 505 8 4. Radiation-Hard ASICs Design5. Conclusions; Space Radiation Effects in Optocouplers; 1.0 Introduction; 2.0 Optocoupter Types Addressed in This Paper; 3.0 Physical Mechanisms of Particle-Induced Transient Effects; 4.0 Physical Mechanisms for Permanent Degradation; 5.0 Conclusions; Radiation Effects in Charge-Coupled Device (CCD) Imagers and CMOS Active Pixel Sensors; 1. Introduction; 2. Damage due to Total Ionizing Dose (TTD); 3. Displacement Damage; 4. Transient Events; 5. Future Work; The Effects of Space Radiation Exposure on Power MOSFETs: A Review; 1. Introduction. 505 8 2. Power MOSFET Technotogies3. Total Dose Ionizing Radiation Effects on Power MOSFETs; 4. Single Event Radiation Effects; 5. Conclusions; Introduction to SOI MOSFETs: Context Radiation Effects and Future Trends; 1. Introduction; 2. Current Status of SOI Technology; 3. Operation Mechanisms in SOI MOSFETs; 4. Radiation Effects on SOI MOSFETs; 5. Future Trends; 6. Conclusions; Total- Dose and Single-Event Effects in Silicon-Germanium Heterojunction Bipolar Transistors; 1. Introduction; 2. The SiGe HBT; 3. Radiation Response of SiGe HBTs; 4. SiGe HBT Circuit Tolerance. 520 This book provides a detailed treatment of radiation effects in electronic devices, including effects at the material, device, and circuit levels. The emphasis is on transient effects caused by single ionizing particles (single-event effects and soft errors) and effects produced by the cumulative energy deposited by the radiation (total ionizing dose effects). Bipolar (Si and SiGe), metal-oxide-semiconductor (MOS), and compound semiconductor technologies are discussed. In addition to considering the specific issues associated with high- performance devices and technologies, the book includes th. 588 0 Print version record. 590 eBooks on EBSCOhost|bEBSCO eBook Subscription Academic Collection - North America 650 0 Electronic circuits|0https://id.loc.gov/authorities/ subjects/sh85042279|xEffect of radiation on.|0https:// id.loc.gov/authorities/subjects/sh00002522 650 0 Integrated circuits|xEffect of radiation on.|0https:// id.loc.gov/authorities/subjects/sh85067120 650 7 Electronic circuits.|2fast|0https://id.worldcat.org/fast/ 906874 650 7 Integrated circuits|xEffect of radiation on.|2fast|0https: //id.worldcat.org/fast/975559 655 4 Electronic books. 700 1 Schrimpf, Ronald Donald.|0https://id.loc.gov/authorities/ names/n89629527 700 1 Fleetwood, D. M.|q(Dan M.)|0https://id.loc.gov/authorities /names/nb2004308696 776 08 |iPrint version:|tRadiation effects and soft errors in integrated circuits and electronic devices.|dSingapore ; New Jersey : World Scientific Pub., ©2004|w(DLC) 2006273469 830 0 Selected topics in electronics and systems ;|0https:// id.loc.gov/authorities/names/no95054495|vvol. 34. 856 40 |uhttps://rider.idm.oclc.org/login?url=http:// search.ebscohost.com/login.aspx?direct=true&scope=site& db=nlebk&AN=235566|zOnline eBook. Access restricted to current Rider University students, faculty, and staff. 856 42 |3Instructions for reading/downloading this eBook|uhttp:// guides.rider.edu/ebooks/ebsco 901 MARCIVE 20231220 948 |d20161017 |cMH |tebscoebooksacademic updated may-july27 |lridw 948 |d20160616|cEBSCO|tebscoebooksacademic|lridw 994 92|bRID