LEADER 00000cam a2200601Ia 4500
001 ocn173612115
003 OCoLC
005 20160527040902.2
006 m o d
007 cr cnu---unuuu
008 071002s2007 njua ob 001 0 eng d
019 173485448
020 9789812707581|q(electronic book)
020 9812707581|q(electronic book)
035 (OCoLC)173612115|z(OCoLC)173485448
040 N$T|beng|epn|cN$T|dYDXCP|dOCLCQ|dIDEBK|dOCLCQ|dMERUC
|dOCLCQ|dOCLCO|dOCLCQ|dOCLCF|dNLGGC|dOCLCQ|dEBLCP|dOCLCQ
049 RIDW
050 4 TK7871.95|b.A763 2007eb
072 7 TEC|x008110|2bisacsh
082 04 621.3815/284|222
090 TK7871.95|b.A763 2007eb
100 1 Arora, N.|q(Narain),|d1943-|0https://id.loc.gov/
authorities/names/n93108338
245 10 Mosfet modeling for VLSI simulation :|btheory and practice
/|cNarain Arora.
264 1 New Jersey :|bWorld Scientific,|c[2007]
264 4 |c©2007
300 1 online resource (xxiii, 605 pages) :|billustrations.
336 text|btxt|2rdacontent
337 computer|bc|2rdamedia
338 online resource|bcr|2rdacarrier
340 |gpolychrome|2rdacc
347 text file|2rdaft
490 1 International series on advances in solid state
electronics and technology
504 Includes bibliographical references and index.
505 0 Foreword; Preface; Contents; List of Symbols; Acronyms; 1
Overview; 2 Review of Basic Semiconductor and pn Junction
Theory; 3 MOS Transistor Structure and Operation; 4 MOS
Capacitor; 5 Threshold Voltage; 6 MOSFET DC Model; 7
Dynamic Model; 8 Modeling Hot-Carrier Effects; 9 Data
Acquisition and Model Parameter Measurements; 10 Model
Parameter Extraction Using Optimization Method; 11 SPICE
Diode and MOSFET Models and Their Parameters; 12
Statistical Modeling and Worst-case Design Parameters;
Appendix A. Important Properties of Silicon, Silicon
Dioxide and Silicon Nitride at 300K.
520 A reprint of the classic text, this book popularized
compact modeling of electronic and semiconductor devices
and components for college and graduate-school classrooms,
and manufacturing engineering, over a decade ago. The
first comprehensive book on MOS transistor compact
modeling, it was the most cited among similar books in the
area and remains the most frequently cited today. The
coverage is device-physics based and continues to be
relevant to the latest advances in MOS transistor
modeling. This is also the only book that discusses in
detail how to measure device model parameters required.
588 0 Print version record.
590 eBooks on EBSCOhost|bEBSCO eBook Subscription Academic
Collection - North America
650 0 Metal oxide semiconductor field-effect transistors.|0https
://id.loc.gov/authorities/subjects/sh85084065
650 0 Integrated circuits|xVery large scale integration.|0https:
//id.loc.gov/authorities/subjects/sh85067125
650 0 Integrated circuits|xVery large scale integration|0https:/
/id.loc.gov/authorities/subjects/sh85067125|xComputer
simulation.|0https://id.loc.gov/authorities/subjects/
sh99005300
650 7 Metal oxide semiconductor field-effect transistors.|2fast
|0https://id.worldcat.org/fast/1017614
650 7 Integrated circuits|xVery large scale integration.|2fast
|0https://id.worldcat.org/fast/975602
650 7 Integrated circuits|xVery large scale integration
|xComputer simulation.|2fast|0https://id.worldcat.org/fast
/975603
655 4 Electronic books.
776 08 |iPrint version:|aArora, N. (Narain), 1943-|tMosfet
modeling for VLSI simulation.|dNew Jersey : World
Scientific, ©2007|z9789812568625|z981256862X|w(DLC)
2007278691|w(OCoLC)171615086
830 0 International series on advances in solid state
electronics and technology.|0https://id.loc.gov/
authorities/names/no95055036
856 40 |uhttps://rider.idm.oclc.org/login?url=http://
search.ebscohost.com/login.aspx?direct=true&scope=site&
db=nlebk&AN=203861|zOnline eBook. Access restricted to
current Rider University students, faculty, and staff.
856 42 |3Instructions for reading/downloading this eBook|uhttp://
guides.rider.edu/ebooks/ebsco
901 MARCIVE 20231220
948 |d20160615|cEBSCO|tebscoebooksacademic|lridw
994 92|bRID
