| Description |
1 online resource (335 pages) |
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text file |
| Contents |
Cover; Half Title Page; Title Page; Copyright Page; Declaration; About the Editor; Table of Contents; List of Contributors; List of Abbreviations; Preface; SECTION I SEMICONDUCTOR MODELING; Chapter 1 A Study on Modeling and Simulation of Multiple-Gate MOSFETSs; Abstract; Introduction; Beyond Planar CMOS Technology; Development In Device Modeling; Conclusion; References; Chapter 2 Analytical Expressions For Numerical Characterization of Semiconductors Per Comparison With Luminescence; Abstract; Introduction; Mathematical Model; Numerical Application; Conclusions; Acknowledgments |
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Conflicts of InterestReferences; SECTION II SEMICONDUCTOR MANUFACTURING; Chapter 3 Kernel-Density-Based Particle Defect Management For Semiconductor Manufacturing Facilities; Abstract; Introduction; The Conventional Industrial Method; Experimental Results; Conclusions; Acknowledgments; Author Contributions; References; Chapter 4 Research and Design on a Product Data Definition System of Semiconductor Packaging Industry; Abstract; Introduction; Implementation of the PDD System; Conclusion; References; SECTION III ADVANCED PLASMA TECHNIQUES FOR ELECTRONIC APPLICATIONS |
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Chapter 5 Vertical And Bevel-Structured SiC Etching Techniques Incorporating Different Gas Mixture Plasmas For Various Microelectronic ApplicationsAbstract; Introduction; Methods; Results And Discussion; Conclusions; Acknowledgements; Author Contributions; References; Chapter 6 Scalable Simple Liquid Deposition Techniques For The Enhancement Of Light Absorption In Thin Films: Distributed Bragg Reflectors Coupled To 1D Nanoimprinted Textures; Abstract; Acknowledgments; References; Chapter 7 Oxidation Rates of Aluminium Nitride Thin Films: Effect of Composition of The Atmosphere; Abstract |
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IntroductionMaterials and Methods; Results and Discussion; Conclusions; Acknowledgements; References; SECTION IV GALLIUM NITRIDE CRYSTALS AND THEIR APPLICATION TO THE ELECTRONIC DEVICES; Chapter 8 Advances In GAN Crystals And Their Applications; Abstract; Applications of GaN-Based Compounds; Nanotechnology and Fabrication of GaN Crystal; Current Perspectives In The Applications of Nanostructured GaN; Acknowledgments; References; Chapter 9 Improved Ohmic-Contact To AlGaN/GaN Using Ohmic Region Recesses by Self-Terminating Thermal Oxidation Assisted Wet Etching Technique; Abstract; Introduction |
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ExperimentsResults and Discussion; Conclusion; Acknowledgments; References; Chapter 10 Effects of Post-Deposition Annealing On Zro2/N-GaN MOS Capacitors With H2O And O3 as The Oxidizers; Abstract; Background; Methods; Results and Discussion; Conclusions; Declarations; References; Chapter 11 SiC/GaN Power Semiconductor Devices: A Theoretical Comparison And Experimental Evaluation Under Different Switching Conditions; Abstract; Introduction; Theoretical Comparison; Experimental Validation; Conclusion; Acknowledgments; References |
| Note |
Chapter 12 Characterisation and Modeling of Gallium Nitride Power Semiconductor Devices Dynamic on-State Resistance |
| Local Note |
eBooks on EBSCOhost EBSCO eBook Subscription Academic Collection - North America |
| Subject |
Semiconductors -- Materials -- Technological innovations.
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Semiconductors -- Materials. |
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Technological innovations. |
| Genre/Form |
Electronic books.
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| Other Form: |
Print version: Spexia, Stefano. Semiconductor Material Technologies. Ashland : Arcler Press, ©2019 |
| ISBN |
1773616323 |
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9781773616322 (electronic book) |
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