Description |
1 online resource (ix, 270 pages) : illustrations. |
Physical Medium |
polychrome |
Description |
text file |
Series |
Selected topics in electronics and systems ; v. 23
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Selected topics in electronics and systems ; v. 23.
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Bibliography |
Includes bibliographical references. |
Summary |
Annotation This book presents in summary the state of our knowledge of oxide reliability. The articles have been written by experts who are among the most knowledgeable in the field. The book will be an invaluable aid to reliability engineers and manufacturing engineers, helping them to produce and characterize reliable oxides. It can be used as an introduction for new engineers interested in oxide reliability, besides being a reference for engineers already engaged in the field. |
Contents |
Oxide wearout, breakdown, and reliability / D.J. Dumin -- Reliability of flash nonvolatile memories / N. Mielke and J. Chen -- Physics and chemistry of intrinsic time-dependent dielectric breakdown in SiO2 dielectrics / J.W. McPherson -- Breakdown modes and breakdown statistics of ultrathin SiO2 gate oxides / J. Sune, D. Jimenez, and E. Miranda -- MOSFET gate oxide reliability: Anode hole injection model and its applications / Y.-C. Yeo, Q. Lu, and C. Hu. |
Local Note |
eBooks on EBSCOhost EBSCO eBook Subscription Academic Collection - North America |
Subject |
Metal oxide semiconductors -- Reliability.
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Metal oxide semiconductors -- Reliability. |
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Metal oxide semiconductors. |
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Silicon oxide -- Deterioration.
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Silicon oxide. |
Genre/Form |
Electronic books.
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Electronic books.
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Added Author |
Dumin, D. J.
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Other Form: |
Print version: Oxide reliability. [River Edge, NJ] : World Scientific, ©2002 9810248423 9789810248420 (DLC) 2002279812 (OCoLC)49996738 |
ISBN |
9789812778062 (electronic book) |
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9812778063 (electronic book) |
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9789810248420 |
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9810248423 |
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9810248423 |
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