| Description |
1 online resource (xiii, 208 pages) : illustrations. |
| Physical Medium |
polychrome |
| Description |
text file |
| Series |
Selected topics in electronics and systems ; v. 36
|
|
Selected topics in electronics and systems ; v. 36.
|
| Bibliography |
Includes bibliographical references and indexes. |
| Contents |
Preface; Contents; Chapter 1 Introductory Chapter; Chapter 2 Avalanche Multiplication; Chapter 3 Static Avalanche Breakdown; Chapter 4 Avalanche Injection; Chapter 5 Dynamic Breakdown; Conclusion; List of Symbols; Bibliography; Index; AUTHOR INDEX. |
| Summary |
Impact ionization, avalanche and breakdown phenomena form the basis of many very interesting and important semiconductor devices, such as avalanche photodiodes, avalanche transistors, suppressors, sharpening diodes (diodes with delayed breakdown), as well as IMPATT and TRAPATT diodes. In order to provide maximal speed and power, many semiconductor devices must operate under or very close to breakdown conditions. Consequently, an acquaintance with breakdown phenomena is essential for scientists or engineers dealing with semiconductor devices. The aim of this book is to summarize the main experi. |
| Local Note |
eBooks on EBSCOhost EBSCO eBook Subscription Academic Collection - North America |
| Subject |
Semiconductors.
|
|
Semiconductors. |
|
Breakdown (Electricity)
|
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Breakdown (Electricity) |
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High voltages.
|
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High voltages. |
| Genre/Form |
Electronic books.
|
| Added Author |
Kostamovaara, Juha.
|
|
Vainshtein, Sergey.
|
| Other Form: |
Print version: Levinshteĭn, M.E. (Mikhail Efimovich). Breakdown phenomena in semiconductors and semiconductor devices. New Jersey ; London : World Scientific, ©2005 9812563954 (DLC) 2006273468 (OCoLC)62473250 |
| ISBN |
9812563954 |
|
9789812563958 |
|
9812703330 (electronic book) |
|
9789812703330 (electronic book) |
|
